central semiconductor corp. tm process CP517 power transistor pnp - darlington chip princip al device types 2n6040 2n6041 2n6042 2n6299 process epitaxial base die size 111 x 111 mils die thickness 10 mils base bonding pad area 20 x 30 mils emitter bonding pad area 20 x 26 mils top side metalization al - 30,000? back side metalization au/cr/ni/au - 6,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com geometry backside collector r1 (1-august 2002) gross die per 5 inch w afer 910
central semiconductor corp. tm process CP517 typical electrical characteristics 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r1 (1-august 2002)
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